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AUIRL2203N
Power MOSFET, N Channel, 30 V, 75 A, 7000 µohm, TO-220AB, Through Hole
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No Longer Stocked
Product Information
ManufacturerINFINEON
Manufacturer Part NoAUIRL2203N
Order Code2148070
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id75A
Drain Source On State Resistance7000µohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Power Dissipation180W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
MSL-
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Product Overview
The AUIRL2203N is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation.
- Advanced planar technology
- Dynamic dV/dt rating
- Fully avalanche rating
- Repetitive avalanche allowed up to Tjmax
Applications
Automotive, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
75A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
180W
Operating Temperature Max
175°C
Qualification
AEC-Q101
Drain Source Voltage Vds
30V
Drain Source On State Resistance
7000µohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002