Notify me when back in stock
Quantity | Price (ex VAT) |
---|---|
1000+ | £1.240 |
Product Information
Product Overview
The 2ED020I12-FI is a 2-channel high voltage high speed power MOSPET and IGBT Driver with CT technology and interlocking high and low-side referenced outputs. The floating high-side driver may be supplied directly or by means of a bootstrap diode and capacitor. In addition to the logic input of each driver is equipped with a dedicated shutdown input. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. This driver is designed to drive an N-channel power IGBT which operate up to 1.2kV.
- Matched propagation delay
- High DV/DT immunity
- Low power consumption
- Floating high side driver
- Under-voltage lockout
- 3.3 and 5V TTL compatible inputs
- CMOS Schmitt-triggered inputs with pull-down
- Non-inverting inputs
- Interlocking inputs
- Dedicated shutdown input with pull-up
Applications
Communications & Networking, Power Management, Alternative Energy, Automotive
Technical Specifications
2Channels
High Side
18Pins
Surface Mount
1A
14V
-40°C
85ns
-
-
-
IGBT
SOIC
Inverting
2A
18V
125°C
85ns
-
No SVHC (21-Jan-2025)
Technical Docs (2)
Alternatives for 2ED020I12-FI
1 Product Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate