H27U4G8F2DTR-BC

The H27U4G8F2DTR-BC is a 4Gbit (512M x 8bit) NAND flash device in 48 pin TSOP package. It provides most cost effective solution for solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The device contains 4096 blocks composed by 64 pages. Memory array is split into two planes, each of them consisting of 2048 blocks. It is possible to program two pages at a time (one per each plane) or to erase 2 blocks at a time (one per each plane) using multi plane architecture. The H27U4G8F2DTR-BC provides page reprogram and multiplane page reprogram facilities.

• Operating voltage range from 2.7V to 3.6V
• X8 organization, (2K + 64)bytes x 64 pages x 4096 blocks
• Block erase or multiple block erase
• Single and multiplane copy back program with automatic EDC (error detection code)
• Single and multiplane page and cashe reprogram
• Access time of 30ns
• 100000 program/erase cycles (with 1bit /528byte ECC)
• 10 year data retention
• ONFI 1.0 compliant command set
• Ambient operating temperature range from 0°C to 70°C

Applications

Embedded Design & Development