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No Longer Manufactured
Product Information
ManufacturerHONEYWELL
Manufacturer Part NoSE2470-002
Order Code1611516
Technical Datasheet
Peak Wavelength880nm
Angle of Half Intensity18°
Diode Case StyleMetal Can
Radiant Intensity (Ie)6mW/Sr
Rise Time700ns
Fall Time tf700ns
Forward Current If(AV)75mA
Forward Voltage VF Max1.8V
Operating Temperature Min-55°C
Operating Temperature Max125°C
Automotive Qualification Standard-
Product Range-
MSL-
SVHCNo SVHC (07-Jul-2017)
Product Overview
The SE2470-002 is a high intensity aluminium gallium arsenide Infrared Emitting Diode mounted in a hermetically sealed, glass lensed, metal can package. This package directly mounts in double sided PC boards. This device typically exhibit 70% greater power intensity than gallium arsenide devices at the same forward current. It is mechanically and spectrally matched to SD2420 photodiode, SD2440 phototransistor and SD2410 photo Darlington.
- Ideal for direct mounting to printed circuit boards
Technical Specifications
Peak Wavelength
880nm
Diode Case Style
Metal Can
Rise Time
700ns
Forward Current If(AV)
75mA
Operating Temperature Min
-55°C
Automotive Qualification Standard
-
MSL
-
Angle of Half Intensity
18°
Radiant Intensity (Ie)
6mW/Sr
Fall Time tf
700ns
Forward Voltage VF Max
1.8V
Operating Temperature Max
125°C
Product Range
-
SVHC
No SVHC (07-Jul-2017)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Tariff No:85414100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (07-Jul-2017)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000045