Print Page
DMN6068SE-13
Power MOSFET, N Channel, 60 V, 4.1 A, 0.068 ohm, SOT-223, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
88 In Stock
4,000 more incoming. You can reserve stock now
Next Day Delivery
Order before 6pm standard shipping
| Quantity | Price (ex VAT) |
|---|---|
| 5+ | £0.560 |
| 50+ | £0.390 |
| 250+ | £0.259 |
| 1000+ | £0.175 |
| 2000+ | £0.172 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
£2.80 (ex VAT)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMN6068SE-13
Order Code3127342
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id4.1A
Drain Source On State Resistance0.068ohm
Transistor Case StyleSOT-223
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation2W
No. of Pins4Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
DMN6068SE-13 is a N-channel enhancement mode MOSFET in a 3 pin SOT223 package. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical applications include motor control, transformer driving switch, DC-DC converters, power management functions and uninterrupted power supply.
- Dain-source voltage is 60V
- Gate-source voltage is ±20V
- Pulsed drain current is 20.8A
- Continuous drain current is 4.5A (VGS = 10V, TA = +70°C)
- Low on-resistance
- Fast switching speed
- 100% unclamped inductive switching ensures more reliable and robust end application
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
4.1A
Transistor Case Style
SOT-223
Rds(on) Test Voltage
10V
Power Dissipation
2W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.068ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
4Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000121
Product traceability