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DMN4800LSSL
Power MOSFET, Enhancement Mode, N Channel, 30 V, 6.7 A, 0.011 ohm, SOIC, Surface Mount
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMN4800LSSL
Order Code2061525RL
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id6.7A
Drain Source On State Resistance0.011ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.2V
Power Dissipation1.46W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for DMN4800LSSL
2 Products Found
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
6.7A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
1.46W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.011ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.2V
No. of Pins
8Pins
Product Range
-
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001134