Print Page

Image is for illustrative purposes only. Please refer to product description.
4,525 In Stock
12,000 more incoming. You can reserve stock now
Next Day Delivery
Order before 6pm standard shipping
Quantity | Price (ex VAT) |
---|---|
500+ | £0.0759 |
1500+ | £0.0725 |
Price for:Each (Supplied on Cut Tape)
Minimum: 500
Multiple: 5
£41.45 (ex VAT)
A £3.50 re-reeling charge will be added for this product
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMC2400UV-7
Order Code2543523RL
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel1.03A
Continuous Drain Current Id P Channel1.03A
Drain Source On State Resistance N Channel0.3ohm
Drain Source On State Resistance P Channel0.3ohm
Transistor Case StyleSOT-563
No. of Pins6Pins
Power Dissipation N Channel450mW
Power Dissipation P Channel450mW
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
MSL-
SVHCNo SVHC (27-Jun-2024)
Product Overview
DMC2400UV-7 is a complementary pair enhancement mode MOSFET in 6 pin SOT-563 package. This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Typical applications include power management functions, battery operated systems and solid-state relays and load switch.
- Drain-source voltage is 20V, gate-source voltage is ±12V
- Pulsed drain current is 3A, maximum body diode continuous current is 800mA
- Low on-resistance
- Low gate threshold voltage VGS(TH) <lt/>1V
- Low input capacitance
- Fast switching speed, low input/output leakage
- Total power dissipation is 0.45W
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
1.03A
Drain Source On State Resistance P Channel
0.3ohm
No. of Pins
6Pins
Power Dissipation P Channel
450mW
Product Range
-
MSL
-
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id N Channel
1.03A
Drain Source On State Resistance N Channel
0.3ohm
Transistor Case Style
SOT-563
Power Dissipation N Channel
450mW
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000145
Product traceability