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FGA25N120ANTDTU-F109
IGBT, NPT Trench, 50 A, 2.65 V, 312 W, 1.2 kV, TO-3PN, 3 Pins
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoFGA25N120ANTDTU-F109
Order Code3368674
Technical Datasheet
Continuous Collector Current50A
Collector Emitter Saturation Voltage2.65V
Power Dissipation312W
Collector Emitter Voltage Max1.2kV
Transistor Case StyleTO-3PN
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingThrough Hole
Product Range-
Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Continuous Collector Current
50A
Power Dissipation
312W
Transistor Case Style
TO-3PN
Operating Temperature Max
150°C
Product Range
-
Collector Emitter Saturation Voltage
2.65V
Collector Emitter Voltage Max
1.2kV
No. of Pins
3Pins
Transistor Mounting
Through Hole
SVHC
No SVHC (15-Jan-2018)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.007257
Product traceability