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NGTB60N65FL2WG.
IGBT, 100 A, 1.64 V, 595 W, 650 V, TO-247, 3 Pins
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No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoNGTB60N65FL2WG.
Order Code2563378
Technical Datasheet
Continuous Collector Current100A
Collector Emitter Saturation Voltage1.64V
Power Dissipation595W
Collector Emitter Voltage Max650V
Transistor Case StyleTO-247
No. of Pins3Pins
Operating Temperature Max175°C
Transistor MountingThrough Hole
Product Range-
Technical Specifications
Continuous Collector Current
100A
Power Dissipation
595W
Transistor Case Style
TO-247
Operating Temperature Max
175°C
Product Range
-
Collector Emitter Saturation Voltage
1.64V
Collector Emitter Voltage Max
650V
No. of Pins
3Pins
Transistor Mounting
Through Hole
Technical Docs (3)
Associated Products
4 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0112
Product traceability