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NTMTS1D6N10MCTXG
Power MOSFET, N Channel, 100 V, 273 A, 0.00142 ohm, DFNW, Surface Mount
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Manufacturer Standard Lead Time: 20 week(s)
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| Quantity | Price (ex VAT) |
|---|---|
| 10+ | £6.430 |
| 50+ | £5.660 |
| 100+ | £4.780 |
| 250+ | £4.500 |
Price for:Each (Supplied on Cut Tape)
Minimum: 10
Multiple: 1
£67.80 (ex VAT)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTMTS1D6N10MCTXG
Order Code3787298RL
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id273A
Drain Source On State Resistance0.00142ohm
On Resistance Rds(on)0.00142ohm
Transistor Case StyleDFNW
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation291W
Power Dissipation Pd291W
No. of Pins8Pins
Operating Temperature Max175°C
Product Range-
Qualification-
Automotive Qualification Standard-
Product Overview
100V, 273A, 1.7mohm single N-channel power MOSFET, This N-channel PTNG 100V MV MOSFET is produced using ON Semiconductor’s advanced Power Trench process that incorporates shielded gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance. Typical applications include motor control, DC-DC converters, battery management/protection, power tools, E-scooters, drones, battery packs/ energy storage units, telecom, netcom and power supplies.
- Very low RDS(on), shielded gate trench technology minimize conduction losses
- Low profile PQFN 8x8 package, small footprint (8x8 mm) for compact design
- Maximum junction temperature of 175°C
- Soft body diode with low Qrr, reduces switching spike
- High peak current and low parasitic inductance
- Offers a wider design margin for thermally challenged applications
- Low QG and capacitance to minimize driver losses
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.00142ohm
Transistor Case Style
DFNW
Rds(on) Test Voltage
10V
Power Dissipation
291W
No. of Pins
8Pins
Product Range
-
Automotive Qualification Standard
-
Channel Type
N Channel
Continuous Drain Current Id
273A
On Resistance Rds(on)
0.00142ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
291W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001
Product traceability