Need more?
Quantity | Price (ex VAT) |
---|---|
1+ | £39.630 |
10+ | £31.190 |
Product Information
Product Overview
HMC529LP5E is a GaAs InGaP heterojunction bipolar transistor (HBT) MMIC VCO. This device integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is +8dBm typical from a +5V supply voltage. The prescaler function can be disabled to conserve current if not required. It is widely used in application such as VSAT radio, point to point/multipoint radio, test equipment & industrial controls, military end-use etc.
- Phase noise is -110dBc/Hz typical at (100KHz)
- Tune voltage is 2V to 13V
- Supply current is 260mA typical at (TA = +25°C, Vcc1, Vcc2 = +5V)
- Output return loss is 8dB typical at (TA = +25°C, Vcc1, Vcc2 = +5V)
- Frequency drift rate is 1.2MHz/°C typical at (TA = +25°C, Vcc1, Vcc2 = +5V)
- No external resonator needed
- Dual output is Fo = 12.4GHz to 13.4GHz, Fo/2 = 6.2GHz to 6.7GHz
- Operating temperature is -40°C to +85°C
- Package style is 32-lead SMT
Notes
ADI products are only authorized (and sold) for use by the customer and are not to be resold or otherwise passed on to any third party
Technical Specifications
-
5V
-40°C
-
SMD, 5mm x 5mm
-
85°C
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate