SFH4250S

The SFH4250S from Osram is a high power infrared emitter (850nm) in SMT power TOPLED PLCC 2 package. This high power infrared LED has short switching times. The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, stress test qualification for automotive grade discrete semiconductors. It has 15ns rise and fall time of Ie (10% and 90% of Ie max) (IF = 100mA, RL = 50 ohm), 3.1V (<= 3.6V) forward voltage (IF = 100mA, tp = 20ms), 4V (<= 5.2V) forward voltage (IF = 700mA, tp = 100µs). The total radiant flux (IF=100mA, tp=20ms) is 100mW, temperature coefficient of Ie or Φe (IF = 100mA, tp = 20ms) is -0.5%/K, temperature coefficient of VF (IF = 100mA, tp = 20ms) is -2mV/K, temperature coefficient of wavelength (IF = 100mA, tp = 20ms) is 0.3nm/K. It is suitable for use in 3D capturing, 3D TV touchscreens, access control / biometrics, CCTV surveillance, gaming, amusement, gambling, industrial automation, safety systems and CCTV, white goods.

• 30 (>= 16)mW/sr radiant intensity at IF= 100mA, tp= 20ms, double stack emitter
• 5V reverse voltage, 100mA forward current, 0.7A surge current (tp <= 300 µs, D = 0)
• Power consumption (Ptot) is 245mW
• ESD withstand voltage is 2KV according to ANSI/ ESDA/ JEDEC JS-001 - HBM
• 860nm peak wavelength (IF = 100mA, tp = 20ms)
• 850nm centroid wavelength (IF = 100mA, tp = 20ms)
• 30nm spectral bandwidth at 50% of Imax (IF = 100mA, tp= 20ms)
• ±60° half angle, dimensions of active chip area is 0.3mm x 0.3mm (L x W)
• Operating temperature range from -40°C to 100°C

Warnings

Depending on the mode of operation, this device emits highly concentrated non visible infrared light which can be hazardous to the human eye.

Notes

Products which incorporate this device has to follow the safety precautions given in IEC 60825-1 and IEC 62471.