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SI2315BDS-T1-E3
Power MOSFET, P Channel, 12 V, 3 A, 0.04 ohm, SOT-23, Surface Mount
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2315BDS-T1-E3
Order Code1470105
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds12V
Continuous Drain Current Id3A
Drain Source On State Resistance0.04ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max900mV
Power Dissipation750mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
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Product Overview
The SI2315BDS-T1-E3 is a P-channel TrenchFET® Power MOSFET with power dissipation at 750mW.
- ±8V Gate-source voltage
- Halogen-free
Applications
Industrial
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
3A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
750mW
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
12V
Drain Source On State Resistance
0.04ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
900mV
No. of Pins
3Pins
Product Range
-
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000041