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No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part No2N5401G
Order Code1703970
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max150V
Continuous Collector Current600mA
Power Dissipation625mW
Transistor Case StyleTO-92
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency300MHz
DC Current Gain hFE Min100hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jan-2018)
Alternatives for 2N5401G
1 Product Found
Product Overview
The 2N5401G is a PNP silicon amplifier Bipolar Transistor, 150VDC collector-emitter voltage, 160VDC collector-base voltage and 600mADC collector current-continuous. Designed for medium power applications.
- 200°C/W Junction-to-ambient thermal resistance
- 83.3°C/W Junction-to-case thermal resistance
Applications
Industrial, Consumer Electronics
Technical Specifications
Transistor Polarity
PNP
Continuous Collector Current
600mA
Transistor Case Style
TO-92
No. of Pins
3Pins
DC Current Gain hFE Min
100hFE
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
150V
Power Dissipation
625mW
Transistor Mounting
Through Hole
Transition Frequency
300MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (15-Jan-2018)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002