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Product Information
ManufacturerNXP
Manufacturer Part NoBF862,215
Order Code1758058
Technical Datasheet
Gate Source Breakdown Voltage Max-20V
Zero Gate Voltage Drain Current Idss Min10mA
Zero Gate Voltage Drain Current Max25mA
Gate Source Cutoff Voltage Max-1.2V
Transistor Case StyleSOT-23
Transistor TypeJFET
Operating Temperature Max150°C
No. of Pins3 Pin
Channel TypeN Channel
Transistor MountingSurface Mount
Product Range-
Qualification-
MSL-
SVHCNo SVHC (17-Dec-2015)
Alternatives for BF862,215
1 Product Found
Product Overview
The BF862,215 is a N-channel symmetrical silicon junction FET Transistor. Drain and source are interchangeable.
- High Transfer Admittance
- High Transition Frequency for Excellent Sensitivity in AM Car Radios
Applications
Audio, Signal Processing
Technical Specifications
Gate Source Breakdown Voltage Max
-20V
Zero Gate Voltage Drain Current Max
25mA
Transistor Case Style
SOT-23
Operating Temperature Max
150°C
Channel Type
N Channel
Product Range
-
MSL
-
Zero Gate Voltage Drain Current Idss Min
10mA
Gate Source Cutoff Voltage Max
-1.2V
Transistor Type
JFET
No. of Pins
3 Pin
Transistor Mounting
Surface Mount
Qualification
-
SVHC
No SVHC (17-Dec-2015)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Dec-2015)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000045
Product traceability