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Product Information
ManufacturerVISHAY
Manufacturer Part NoTP0610K-T1-GE3
Order Code1794816
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id185mA
Drain Source On State Resistance10ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max2V
Power Dissipation350mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The TP0610K-T1-GE3 is a 60VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for relays, solenoids, lamps, hammers, displays, transistors and memories drivers.
- Low ON-resistance
- High-side switching
- Low threshold
- 20ns Fast switching speed
- 20pF low input capacitance
- 2000V ESD protection
- Halogen-free
Applications
Industrial, Power Management, Portable Devices
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
185mA
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
350mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
10ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000109
Product traceability