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Product Information
ManufacturerONSEMI
Manufacturer Part NoMMBT3906WT1G
Order Code1459104
Product RangeMMBTxxxx
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max40V
Continuous Collector Current200mA
Power Dissipation150mW
Transistor Case StyleSOT-323
Transistor MountingSurface Mount
No. of Pins3Pins
Transition Frequency250MHz
DC Current Gain hFE Min250hFE
Operating Temperature Max150°C
Product RangeMMBTxxxx
QualificationAEC-Q101
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The MMBT3906WT1G is a PNP Bipolar Transistor designed for general purpose amplifier applications. It is housed in the package which is designed for low power surface-mount applications.
- Low RDS (ON) provides higher efficiency and extends battery life
- Saves board space
- AEC-Q101 qualified and PPAP capable
Applications
Industrial, Power Management, Automotive
Technical Specifications
Transistor Polarity
PNP
Continuous Collector Current
200mA
Transistor Case Style
SOT-323
No. of Pins
3Pins
DC Current Gain hFE Min
250hFE
Product Range
MMBTxxxx
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
40V
Power Dissipation
150mW
Transistor Mounting
Surface Mount
Transition Frequency
250MHz
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
Alternatives for MMBT3906WT1G
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Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.08
Product traceability