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KSC5026MOS
Bipolar (BJT) Single Transistor, NPN, 800 V, 1.5 A, 20 W, TO-126, Through Hole
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | £1.180 |
| 10+ | £0.752 |
| 100+ | £0.507 |
| 500+ | £0.399 |
| 1000+ | £0.361 |
| 5000+ | £0.300 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoKSC5026MOS
Order Code2825105
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max800V
Continuous Collector Current1.5A
Power Dissipation20W
Transistor Case StyleTO-126
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency15MHz
DC Current Gain hFE Min20hFE
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (27-Jun-2024)
Product Overview
- NPN silicon transistor
- High voltage and high reliability
- High speed switching
- Wide SOA
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
1.5A
Transistor Case Style
TO-126
No. of Pins
3Pins
DC Current Gain hFE Min
20hFE
Product Range
-
SVHC
Lead (27-Jun-2024)
Collector Emitter Voltage Max
800V
Power Dissipation
20W
Transistor Mounting
Through Hole
Transition Frequency
15MHz
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000861
Product traceability