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KSA1220AYS
Bipolar (BJT) Single Transistor, PNP, 160 V, 1.2 A, 20 W, TO-225AA, Through Hole
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoKSA1220AYS
Order Code2453935
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max160V
Continuous Collector Current1.2A
Power Dissipation20W
Transistor Case StyleTO-225AA
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency175MHz
DC Current Gain hFE Min160hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (19-Jan-2021)
Product Overview
The KSA1220AYS is a -160V PNP Epitaxial Silicon Transistor designed for audio frequency power amplifier and high frequency power amplifier applications. This product is general usage and suitable for many different applications.
- Complement to the KSC2690A
Applications
Power Management, Signal Processing
Technical Specifications
Transistor Polarity
PNP
Continuous Collector Current
1.2A
Transistor Case Style
TO-225AA
No. of Pins
3Pins
DC Current Gain hFE Min
160hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
160V
Power Dissipation
20W
Transistor Mounting
Through Hole
Transition Frequency
175MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (19-Jan-2021)
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (19-Jan-2021)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000882
Product traceability