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BD14016STU
Bipolar (BJT) Single Transistor, PNP, 80 V, 1.5 A, 1.25 W, TO-126, Through Hole
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoBD14016STU
Order Code2453337
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max80V
Continuous Collector Current1.5A
Power Dissipation1.25W
Transistor Case StyleTO-126
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency-
DC Current Gain hFE Min100hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (23-Jan-2024)
Alternatives for BD14016STU
1 Product Found
Product Overview
The BD14016STU is a PNP Epitaxial Silicon Transistor suitable for medium power linear and switching applications. The bipolar transistor complement to BD139 NPN transistor.
- -55 to 150°C Operating temperature range
Applications
Power Management, Industrial
Technical Specifications
Transistor Polarity
PNP
Continuous Collector Current
1.5A
Transistor Case Style
TO-126
No. of Pins
3Pins
DC Current Gain hFE Min
100hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
80V
Power Dissipation
1.25W
Transistor Mounting
Through Hole
Transition Frequency
-
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (23-Jan-2024)
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001814