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S29JL064J55TFI000

Flash Memory, Parallel NOR, 64 Mbit, 8M x 8bit / 4M x 16bit, CFI, Parallel, TSOP, 48 Pins

S29JL064J55TFI000 - Flash Memory, Parallel NOR, 64 Mbit, 8M x 8bit / 4M x 16bit, CFI, Parallel, TSOP, 48 Pins

Image is for illustrative purposes only. Please refer to product description.

Manufacturer Part No:
S29JL064J55TFI000
Order Code:
2768012
Product Range
3V Parallel NOR Flash Memories
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Product Overview

The S29JL064J55TFI000 is a 64MB CMOS simultaneous Read/Write Flash Memory organized as 4194304 words of 16-bit each or 8388608 bytes of 8-bit each. Word mode data appears on DQ15-DQ0, byte mode data appears on DQ7-DQ0. The device is designed to be programmed in-system with the standard 3VCC supply and can also be programmed in standard EPROM programmers. The device is available with an access time of 55ns. Standard control pins - chip enable (CE#), write enable (WE#) and output enable (OE#) - control normal read and write operations and avoid bus contention issues. The device requires only a single 3V power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations.
  • Standard configuration
  • Data can be continuously read from one bank while executing erase/program functions in another bank
  • Zero latency between read and write operations
  • Flexible bank architecture
  • Read may occur in any of the three banks not being programmed or erased
  • Four banks may be grouped by customer to achieve desired bank divisions
  • Top and bottom boot sectors in the same device
  • Any combination of sectors can be erased
  • Manufactured on 0.11µm process technology
  • Secured silicon region - Extra 256-byte sector
  • Sophisticated power management circuits reduce power consumed during inactive periods to nearly zero
  • Compatible with JEDEC standards
  • Pinout and software compatible with single-power-supply flash standard
  • High performance
  • Program time - 7µs/word typical using accelerated programming function
  • Ultralow power consumption
  • Cycling endurance - 1million cycles per sector typical
  • Data retention - 20 years typical
  • Supports common flash memory interface
  • Erase suspend/erase resume

Applications

Computers & Computer Peripherals, Industrial, Communications & Networking, Consumer Electronics

Product Information

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:
Parallel NOR

:
64Mbit

:
8M x 8bit / 4M x 16bit

:
CFI, Parallel

:
TSOP

:
48Pins

:
-

:
55ns

:
2.7V

:
3.6V

:
-40°C

:
85°C

:
3V Parallel NOR Flash Memories

:
MSL 3 - 168 hours
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Technical Docs (2)

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