65A Standard Recovery Rectifier Diodes | Farnell® UK

Find a huge range of 65A Standard Recovery Rectifier Diodes at Farnell® UK. We stock a wide range of Standard Recovery Rectifier Diodes, such as 1A, 3A, 2A & 1.5A Standard Recovery Rectifier Diodes from the worlds top manufacturers including: Vishay

Filter(s) Applied

Average Forward Current

:

65A

1 Filter(s) Selected

Compare					Price For		Quantity

	VS-65EPS12L-M3	2989393 Data Sheet RoHS Date/Lot Code	VISHAY Standard Recovery Diode 1.2 kV 65 A Single 1.12 V 840 A		Each	1+ £3.180 10+ £1.610 100+ £1.600 500+ £1.590 1000+ £1.580	Min: 1 / Mult: 1	1.2kV	65A	Single	1.12V	-	840A	150°C	TO-247AD	2Pins
	VS-65EPF06L-M3	2989391 Data Sheet RoHS Date/Lot Code	VISHAY Standard Recovery Diode 600 V 65 A Single 1.32 V 180 ns 700 A		Each	1+ £4.010 5+ £3.450 10+ £3.100 50+ £2.500 100+ £2.420 More Pricing...	Min: 1 / Mult: 1	600V	65A	Single	1.32V	180ns	700A	150°C	TO-247AD	2Pins
	VS-65EPS16L-M3	2989394 Data Sheet RoHS Date/Lot Code	VISHAY Standard Recovery Diode 1.6 kV 65 A Single 1.17 V 950 A		Each	1+ £3.910 10+ £3.450 100+ £2.990 500+ £2.520 1000+ £2.060	Min: 1 / Mult: 1	1.6kV	65A	Single	1.17V	-	950A	150°C	TO-247AD	2Pins
	VS-65APF12L-M3	2989388 Data Sheet RoHS Date/Lot Code	VISHAY Standard Recovery Diode 1.2 kV 65 A Single 1.42 V 480 ns 700 A		Each	500+ £2.550	Min: 500 / Mult: 500	1.2kV	65A	Single	1.42V	480ns	700A	150°C	TO-247AD	3Pins
	VS-65APS16L-M3	2989390 Data Sheet RoHS Date/Lot Code	VISHAY Standard Recovery Diode 1.6 kV 65 A Single 1.17 V 950 A		Each	1+ £2.340 10+ £2.050 100+ £2.040 500+ £2.020 1000+ £2.010	Min: 1 / Mult: 1	1.6kV	65A	Single	1.17V	-	950A	150°C	TO-247AD	3Pins
	VS-65APS12L-M3	2989389 Data Sheet RoHS Date/Lot Code	VISHAY Standard Recovery Diode 1.2 kV 65 A Single 1.12 V 840 A		Each	1+ £6.480 10+ £5.440 100+ £5.410 500+ £3.660 1000+ £1.900	Min: 1 / Mult: 1	1.2kV	65A	Single	1.12V	-	840A	150°C	TO-247AD	3Pins
	VS-65APF06L-M3	2989387 Data Sheet RoHS Date/Lot Code	VISHAY Standard Recovery Diode 600 V 65 A Single 1.32 V 180 ns 700 A		Each	500+ £2.620	Min: 500 / Mult: 500	600V	65A	Single	1.32V	180ns	700A	150°C	TO-247AD	3Pins
	VS-65EPF12L-M3	2989392 Data Sheet RoHS Date/Lot Code	VISHAY Standard Recovery Diode 1.2 kV 65 A Single 1.42 V 480 ns 700 A		Each	1+ £4.360 5+ £3.990 10+ £3.630 50+ £3.260 100+ £2.900 More Pricing...	Min: 1 / Mult: 1	1.2kV	65A	Single	1.42V	480ns	700A	150°C	TO-247AD	2Pins

Items per page:

1-8 of 8 items

of 1 page(s)

Popular Suppliers

ONSEMI

NEXPERIA

VISHAY

STMICROELECTRONICS

MULTICOMP PRO

INFINEON

NXP

ROHM

New Semiconductors - Discretes

Bipolar Pre-Biased / Digital Transistor

Bipolar Pre-Biased / Digital Transistor

ONSEMI

Trench Gate, -50V to -200V P-Channel Power MOSFETs

Trench Gate, -50V to -200V P-Channel Power MOSFETs

LITTELFUSE

TP65H035G4YS - gallium nitride (GaN) FET

TP65H035G4YS - gallium nitride (GaN) FET

RENESAS

G3R60MT07K – Silicon Carbide MOSFET

GENESIC SEMICONDUCTOR

G3R60MT07K – Silicon Carbide MOSFET

GENESIC SEMICONDUCTOR

TK024N60Z1,S1F(S - Power MOSFET

TK024N60Z1,S1F(S - Power MOSFET

TOSHIBA

ONSEMI

CoolSiC™ Trench MOSFET

CoolSiC™ Trench MOSFET

INFINEON

EconoDUAL™ 3 product family for medium power applications

EconoDUAL™ 3 product family for medium power applications

INFINEON

TK024N60Z1,S1F(S - Power MOSFET

TK024N60Z1,S1F(S - Power MOSFET

TOSHIBA

Nexperia E-Mode Power Gallium Nitride FET's (GaN FET's) for high & low voltage applications.

Nexperia E-Mode Power Gallium Nitride FET's (GaN FET's) for high & low voltage applications.

NEXPERIA

New onsemi 650v SiC MOSFETs

New onsemi 650v SiC MOSFETs

ONSEMI

semi-disc-np1-nov-analog-devices-matched-bjt-arrays

semi-disc-np1-nov-analog-devices-matched-bjt-arrays

ANALOG DEVICES

New Toshiba SiC Schottky Barrier Diodes

New Toshiba SiC Schottky Barrier Diodes

TOSHIBA

XPT series IGBT Thin-wafer Technology for snubber-less hard-switching applications

XPT series IGBT Thin-wafer Technology for snubber-less hard-switching applications

LITTELFUSE

MPS Series SiC Schottky Diodes - 650V to 1.7KV

GENESIC SEMICONDUCTOR

MPS Series SiC Schottky Diodes - 650V to 1.7KV

GENESIC SEMICONDUCTOR