
| Quantity | Price (ex VAT) |
|---|---|
| 3000+ | £1.390 |
Product Information
Product Overview
The IR2101PBF is a high voltage high speed power MOSFET and IGBT Driver with independent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output and down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
- DV/DT Immune
- Under-voltage lockout
- Matched propagation delay for both channels
- Outputs in phase with inputs
Applications
Industrial, Consumer Electronics, Alternative Energy, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
2Channels
High Side and Low Side
8Pins
Through Hole
210mA
10V
-40°C
160ns
-
-
-
IGBT, MOSFET
DIP
Non-Inverting
360mA
20V
125°C
150ns
-
No SVHC (25-Jun-2025)
Associated Products
1 Product Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate
