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SI2308BDS-T1-GE3
Power MOSFET, N Channel, 60 V, 2.3 A, 0.156 ohm, TO-236, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSI2308BDS-T1-GE3Copy
Manufacturer Standard Lead Time17 weeks
Order Code1794782
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Manufacturer Standard Lead Time: 17 week(s)
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | £0.575 |
| 10+ | £0.355 |
| 100+ | £0.282 |
| 500+ | £0.254 |
| 1000+ | £0.227 |
| 5000+ | £0.186 |
Price for:Each
Minimum: 1
Multiple: 1
£0.58 (ex VAT)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2308BDS-T1-GE3Copy
Manufacturer Standard Lead Time17 weeks
Order Code1794782
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id2.3A
Drain Source On State Resistance0.156ohm
Transistor Case StyleTO-236
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Power Dissipation1.66W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (04-Feb-2026)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
2.3A
Transistor Case Style
TO-236
Rds(on) Test Voltage
10V
Power Dissipation
1.66W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.156ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0014
Product traceability