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VISHAY  TSAL6200...  Infrared Emitter, High Power, 17 °, T-1 3/4 (5mm), 100 mA, 1.35 V, 800 ns, 800 ns

VISHAY TSAL6200...
Technical Data Sheet (100.68KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The TSAL6200 is a 940nm Infrared Emitting Diode in GaAlAs Multi Quantum Well (MQW) technology with high radiant power and high speed.
  • High Reliability
  • High Radiant Power
  • High Radiant Intensity
  • Low Forward Voltage
  • Suitable for High Pulse Current Operation
  • Good Spectral Matching with Si Photodetectors
  • Halogen-free

 

Product Information

Viewing Angle:
17°
Diode Case Style:
T-1 3/4 (5mm)
Forward Current If(AV):
100mA
Forward Voltage VF Max:
1.35V
Rise Time:
800ns
Fall Time tf:
800ns
Operating Temperature Min:
-40°C
Operating Temperature Max:
85°C
Packaging:
Each
Product Range:
-
MSL:
-
SVHC:
To Be Advised

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Applications

  • Consumer Electronics

Legislation and Environmental

Moisture Sensitivity Level:
-
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85414010
Weight (kg):
.00068

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