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PMV16UN
Power MOSFET, N Channel, 20 V, 5.8 A, 0.015 ohm, SOT-23, Surface Mount
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Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPMV16UN
Order Code1894627RL
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id5.8A
Drain Source On State Resistance0.015ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max700mV
Power Dissipation510mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for PMV16UN
1 Product Found
Product Overview
The PMV16UN is a N-channel enhancement-mode FET in a small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, low-side load-switch and switching circuit applications.
- Low threshold voltage
- Very fast switching
- -55 to 150°C Junction temperature range
Applications
Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
5.8A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
510mW
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.015ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
700mV
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000181