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IPP114N03L G
Power MOSFET, N Channel, 30 V, 30 A, 0.0095 ohm, TO-220, Through Hole
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerINFINEON
Manufacturer Part NoIPP114N03L G
Order Code1775642
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id30A
Drain Source On State Resistance0.0095ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Power Dissipation38W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
Alternatives for IPP114N03L G
1 Product Found
Product Overview
The IPP114N03L G is an OptiMOS™3 N-channel Power Transistor features fast switching MOSFET for SMPS, logic level and Optimized technology for DC/DC converters.
- Excellent gate charge
- Very low on resistance
- Avalanche rated
Applications
Power Management, Automotive, Consumer Electronics, Motor Drive & Control
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
30A
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation
38W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0095ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002