Print Page
FDC637BNZ
Power MOSFET, N Channel, 20 V, 6.2 A, 0.021 ohm, SuperSOT, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
1,310 In Stock
Need more?
Next Day Delivery
Order before 6pm standard shipping
| Quantity | Price (ex VAT) |
|---|---|
| 5+ | £0.508 |
| 10+ | £0.332 |
| 100+ | £0.221 |
| 500+ | £0.168 |
| 1000+ | £0.148 |
| 5000+ | £0.105 |
Price for:Each
Minimum: 5
Multiple: 5
£2.54 (ex VAT)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDC637BNZ
Order Code2322581
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id6.2A
Drain Source On State Resistance0.021ohm
Transistor Case StyleSuperSOT
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max800mV
Power Dissipation1.6W
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
The FDC637BNZ is a 2.5V specified N-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It is designed to offer exceptional power dissipation in a very small footprint compared with bigger SO-8 and TSSOP-8 packages. It is suitable for use in DC-to-DC converter, load switching and battery protection applications.
- Fast switching speed
- High performance Trench technology for extremely low RDS (ON)
- Manufactured using green packaging material
- Halide-free
- 2kV typical HBM ESD protection level
- 8nC typical low gate charge
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
6.2A
Transistor Case Style
SuperSOT
Rds(on) Test Voltage
4.5V
Power Dissipation
1.6W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.021ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
800mV
No. of Pins
6Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for FDC637BNZ
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.01
Product traceability