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SUP25P10-138-GE3
Power MOSFET, P Channel, 100 V, 16.3 A, 0.138 ohm, TO-220AB, Through Hole
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No Longer Stocked
Product Information
ManufacturerVISHAY
Manufacturer Part NoSUP25P10-138-GE3
Order Code2400412
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id16.3A
Drain Source On State Resistance0.138ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max-
Power Dissipation73.5W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The SUP25P10-138-GE3 is a 100VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for DC-to-DC converter and motor control applications.
- 100% Rg tested
- 100% UIS tested
- Halogen-free
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
16.3A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
73.5W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.138ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
-
No. of Pins
3Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0019
Product traceability