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SI7882DP-T1-E3
Power MOSFET, N Channel, 12 V, 22 A, 0.0055 ohm, SOIC, Surface Mount
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7882DP-T1-E3
Order Code1470159RL
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds12V
Continuous Drain Current Id22A
Drain Source On State Resistance0.0055ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1.4V
Power Dissipation5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jun-2015)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
22A
Transistor Case Style
SOIC
Rds(on) Test Voltage
4.5V
Power Dissipation
5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (15-Jun-2015)
Drain Source Voltage Vds
12V
Drain Source On State Resistance
0.0055ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.4V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (15-Jun-2015)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000246