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2N7002-T1-E3
Power MOSFET, N Channel, 60 V, 115 mA, 7.5 ohm, TO-236, Surface Mount
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Product Information
ManufacturerVISHAY
Manufacturer Part No2N7002-T1-E3
Order Code1021754RL
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id115mA
Drain Source On State Resistance7.5ohm
Transistor Case StyleTO-236
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.1V
Power Dissipation200mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
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Product Overview
The 2N7002-T1-E3 is a 60V N-channel MOSFET with low on resistance and low threshold. Suitable for solid-state relays and TTL/CMOS direct logic-level interface.
- Low input capacitance
- Fast switching speed
- Low input and output leakage
- Low offset voltage
- Low error voltage
Applications
Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
115mA
Transistor Case Style
TO-236
Rds(on) Test Voltage
10V
Power Dissipation
200mW
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
60V
Drain Source On State Resistance
7.5ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.1V
No. of Pins
3Pins
Product Range
-
Technical Docs (3)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000033