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STY60NM60
Power MOSFET, N Channel, 600 V, 30 A, 0.05 ohm, MAX-247, Through Hole
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No Longer Stocked
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTY60NM60
Order Code1752220
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id30A
Drain Source On State Resistance0.05ohm
Transistor Case StyleMAX-247
Transistor MountingThrough Hole
Rds(on) Test Voltage30V
Gate Source Threshold Voltage Max4V
Power Dissipation560W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
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Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
30A
Transistor Case Style
MAX-247
Rds(on) Test Voltage
30V
Power Dissipation
560W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.05ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0002