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NXH50M65L4C2SG
IGBT Module, 50 A, 1.6 V, 150 °C, DIP
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | £42.110 |
| 5+ | £41.270 |
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Multiple: 1
£42.11 (ex VAT)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNXH50M65L4C2SG
Order Code3872101
Technical Datasheet
IGBT Configuration-
Continuous Collector Current50A
DC Collector Current50A
Collector Emitter Saturation Voltage Vce(on)1.6V
Collector Emitter Saturation Voltage1.6V
Power Dissipation-
Power Dissipation Pd-
Operating Temperature Max150°C
Junction Temperature Tj Max150°C
Transistor Case StyleDIP
IGBT TerminationSolder
Collector Emitter Voltage V(br)ceo650V
Collector Emitter Voltage Max650V
IGBT Technology-
Transistor MountingPanel
Product Range-
SVHCNo SVHC (15-Jan-2018)
Technical Specifications
IGBT Configuration
-
DC Collector Current
50A
Collector Emitter Saturation Voltage
1.6V
Power Dissipation Pd
-
Junction Temperature Tj Max
150°C
IGBT Termination
Solder
Collector Emitter Voltage Max
650V
Transistor Mounting
Panel
SVHC
No SVHC (15-Jan-2018)
Continuous Collector Current
50A
Collector Emitter Saturation Voltage Vce(on)
1.6V
Power Dissipation
-
Operating Temperature Max
150°C
Transistor Case Style
DIP
Collector Emitter Voltage V(br)ceo
650V
IGBT Technology
-
Product Range
-
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001