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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDB8832
Order Code1495284
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id34A
Drain Source On State Resistance0.0019ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max1.6V
Power Dissipation300W
No. of Pins2Pins
Operating Temperature Max175°C
Product Range-
Qualification-
Product Overview
The FDB8832 is a logic level N-channel MOSFET produced using PowerTrench® process. It is suitable for use in starter/alternator systems, electronic power steering systems and DC-to-DC converters.
- Low miller charge
- Low Qrr body diode
- UIS Capability (single pulse and repetitive pulse)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
34A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
20V
Power Dissipation
300W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0019ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.6V
No. of Pins
2Pins
Product Range
-
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00143
Product traceability