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Quantity | Price (ex VAT) |
---|---|
3000+ | £0.0918 |
9000+ | £0.0838 |
Product Information
Product Overview
The 2N7002 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. It minimize on-state resistance while providing rugged, reliable and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. Suitable for low-voltage, low-current applications, such as small servo motor control and power MOSFET gate drivers.
- High density cell design for extremely low RDS (ON)
- High saturation current capability
- Voltage controlled small signal switch
- Rugged and reliable
Applications
Power Management, Motor Drive & Control, Audio
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
N Channel
115mA
SOT-23
10V
200mW
150°C
-
No SVHC (23-Jan-2024)
60V
1.2ohm
Surface Mount
2.1V
3Pins
-
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate