FQA19N60
Power MOSFET, N Channel, 600 V, 18.5 A, 0.38 ohm, TO-3P, Through Hole
Product Information
Alternatives for FQA19N60
1 Product Found
Product Overview
The FQA19N60 is a 600V N-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode. This device is well suited for high efficient switched mode power supplies, active power factor correction and electronic lamp ballast based on half bridge topology. This product is general usage and suitable for many different applications.
- Low gate charge
- 100% avalanche tested
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
N Channel
18.5A
TO-3P
10V
300W
150°C
-
Lead (08-Jul-2021)
600V
0.38ohm
Through Hole
5V
3Pins
-
-
Technical Docs (3)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate