Print Page
FDC642P-F085
Power MOSFET, P Channel, 20 V, 4 A, 0.0525 ohm, SuperSOT, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFDC642P-F085
Order Code3368729
Product RangePowerTrench
Technical Datasheet
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDC642P-F085
Order Code3368729
Product RangePowerTrench
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id4A
Drain Source On State Resistance0.0525ohm
Transistor Case StyleSuperSOT
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max700mV
Power Dissipation1.2W
No. of Pins6Pins
Operating Temperature Max150°C
Product RangePowerTrench
QualificationAEC-Q101
SVHCNo SVHC (15-Jan-2018)
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
4A
Transistor Case Style
SuperSOT
Rds(on) Test Voltage
4.5V
Power Dissipation
1.2W
Operating Temperature Max
150°C
Qualification
AEC-Q101
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.0525ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
700mV
No. of Pins
6Pins
Product Range
PowerTrench
SVHC
No SVHC (15-Jan-2018)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0004
Product traceability