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NEXPERIA GAN063-650WSAQ

Gallium Nitride (GaN) Transistor, Gan FET, 650 V, 34.5 A, 0.06 ohm, 15 nC, TP-247, Through Hole

Date/Lot Code
NEXPERIA GAN063-650WSAQ

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Manufacturer:
NEXPERIA NEXPERIA
Manufacturer Part No:
GAN063-650WSAQ
Order Code:
3106435
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Technical Datasheet:
GAN063-650WSAQ   Datasheet
ECAD / MCAD
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Product Overview

GAN063-650WSAQ is a 650V, 50mohm Gallium Nitride (GaN) FET. It is a normally-off device that combines Nexperia’s state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies - offering superior reliability and performance. The applications include hard and soft switching converters for industrial and datacom power, bridgeless totempole PFC, PV, and UPS inverters, and servo motor drives.
  • Ultra-low reverse recovery charge, simple gate drive (0 to +10/12V), robust gate oxide (±20V)
  • High gate threshold voltage (+4V) for very good gate bounce immunity
  • Very low source-drain voltage in reverse conduction mode, transient over-voltage capability (800V)
  • Drain-source voltage is 650V max (55°C ≤ Tj ≤ 175°C)
  • Drain current is 34.5A max (VGS = 10V; Tmb = 25°C), total power dissipation is 143W max (Tmb = 25°C)
  • Drain-source on-state resistance is 50mohm typ (VGS = 10V; ID = 25A; Tj = 25°C)
  • Gate-drain charge is 4nC typ (ID = 25A; VDS = 400V; VGS = 10V; Tj = 25°C)
  • Total gate charge is 15nC typ (ID = 25A; VDS = 400V; VGS = 10V; Tj = 25°C)
  • Recovered charge is 125nC typ (IS = 25A; dIS/dt = -1000A/µs; VGS = 0V; VDS = 400V)
  • 3 leads SOT429 package, junction temperature range from -55 to 175°C

Warnings

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Product Information

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650V

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34.5A

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0.06ohm

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15nC

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3Pins

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Technical Documents (4)

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Standard lead time for this product is 27 weeks.

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