IRS23364DSPBF

The IRS23364DSPBF is a high voltage high speed power MOSFET and IGBT Gate Driver with three high-side and low-side referenced output channels for 3-phase applications. Proprietary HVIC and latch immune CMOS technologies have been implemented in a rugged monolithic structure. The floating logic input is compatible with standard CMOS or LSTTL outputs. An open-drain FAULT signal is provided to indicate that a fault has occurred. Fault conditions are cleared automatically after a delay programmed externally via an RC network connected to the RCIN input. The output driver features a high-pulse current buffer stage designed for minimum driver cross-conduction. Shoot-through protection circuitry and a minimum dead-time circuitry have been integrated into this IC. Propagation delays are matched to simplify the HVICs use in high frequency applications. The floating channels can be used to drive N-channel power MOSFETs or IGBTs in the high-side configuration, which operate up to 600V.

• Drives up to 6-IGBT/MOSFET power devices
• Integrated bootstrap functionality
• Over-current protection
• Over-temperature shutdown input
• Advanced input filter
• Integrated dead-time protection
• Shoot-through (cross-conduction) protection
• Under-voltage lockout for VCC and VBS
• Enable/disable input and fault reporting
• Adjustable fault clear timing
• Separate logic and power grounds
• Tolerant to negative transient voltage
• Designed for use with bootstrap power supplies
• Matched propagation delays for all channels
• 3.3V Input logic compatible
• -40 to 125°C Operating temperature range

Applications

Industrial, Consumer Electronics

Warnings

ESD sensitive device, take proper precaution while handling the device. Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.