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AUIRF7379Q
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 4.8 A, 4.8 A, 0.045 ohm
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No Longer Manufactured
Product Information
ManufacturerINFINEON
Manufacturer Part NoAUIRF7379Q
Order Code1909581
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel4.8A
Continuous Drain Current Id P Channel4.8A
Drain Source On State Resistance N Channel0.045ohm
Drain Source On State Resistance P Channel0.045ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2.5W
Power Dissipation P Channel2.5W
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
4.8A
Drain Source On State Resistance P Channel
0.045ohm
No. of Pins
8Pins
Power Dissipation P Channel
2.5W
Product Range
-
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
4.8A
Drain Source On State Resistance N Channel
0.045ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2.5W
Operating Temperature Max
150°C
Qualification
AEC-Q101
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005