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No Longer Manufactured
Product Information
ManufacturerVISHAY
Manufacturer Part NoSUP75P03-07-E3
Order Code1794812
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id75A
Drain Source On State Resistance7000µohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Power Dissipation187W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
Product Overview
The SUP75P03-07-E3 from Vishay is a through hole, 30V P channel MOSFET in TO-220AB package.
- Drain to source voltage (Vds) of -30V
- Gate to source voltage of ±20V
- Continuous drain current (Id) of -75A
- Power dissipation (Pd) of 187W
- Low on state resistance of 8mohm at Vgs -4.5V
- Operating junction temperature range from -55°C to 175°C
Applications
Power Management, Consumer Electronics, Portable Devices, Industrial
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
75A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
187W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
7000µohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0019