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VISHAY  SQ3418EEV-T1-GE3  MOSFET Transistor, N Channel, 8 A, 40 V, 0.026 ohm, 10 V, 2 V

VISHAY SQ3418EEV-T1-GE3
Technical Data Sheet (112.00KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The SQ3418EEV-T1-GE3 is a 40VDS TrenchFET® N-channel enhancement-mode Power MOSFET with antiparallel diode.
  • 100% Rg tested
  • 100% UIS tested
  • AEC-Q101 qualified
  • 800V ESD protection
  • Halogen-free
  • -55 to 175°C Operating temperature range

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
8A
Drain Source Voltage Vds:
40V
On Resistance Rds(on):
0.026ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
2V
Power Dissipation Pd:
5W
Transistor Case Style:
TSOP
No. of Pins:
6Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
To Be Advised

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Applications

  • Industrial;
  • Power Management;
  • Automotive

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000033