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VISHAY  SIS892ADN-T1-GE3  MOSFET Transistor, N Channel, 28 A, 100 V, 0.027 ohm, 10 V, 1.5 V

VISHAY SIS892ADN-T1-GE3
Technical Data Sheet (537.01KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The SIS892ADN-T1-GE3 is a 100VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for telecom brick, primary side switch and synchronous rectification applications.
  • 100% Rg tested
  • 100% UIS tested
  • Capable of operating with 5V gate drive
  • Halogen-free
  • -55 to 150°C Operating temperature range

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
28A
Drain Source Voltage Vds:
100V
On Resistance Rds(on):
0.027ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
1.5V
Power Dissipation Pd:
52W
Transistor Case Style:
PowerPAK 1212
No. of Pins:
8Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
To Be Advised

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Applications

  • Industrial;
  • Power Management;
  • Communications & Networking

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
Taiwan

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.00012

Associated Products