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VISHAY  SIHG73N60E-GE3  Power MOSFET, N Channel, 73 A, 650 V, 0.032 ohm, 10 V, 2 V

VISHAY SIHG73N60E-GE3
Technical Data Sheet (184.56KB) EN See all Technical Docs

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Product Overview

The SIHG73N60E-GE3 is a 650V N-channel MOSFET with super junction technology to minimize on-resistance and withstand high energy pulse. This E series MOSFET features low input capacitance, reduced switching and conduction losses and simple gate drive circuitry. It is designed for soft switching topologies. Suitable for server and telecom power supply applications.
  • 100% Avalanche rated
  • Low figure of merit Ron X Qg
  • Ultra low gate charge

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
73A
Drain Source Voltage Vds:
650V
On Resistance Rds(on):
0.032ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
2V
Power Dissipation Pd:
520W
Transistor Case Style:
TO-247AC
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
E Series
MSL:
MSL 1 - Unlimited
SVHC:
To Be Advised

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Applications

  • Power Management;
  • Communications & Networking

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.00672