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VISHAY  SIHF6N40D-E3  MOSFET Transistor, N Channel, 6 A, 400 V, 0.85 ohm, 10 V, 3 V

VISHAY SIHF6N40D-E3
Technical Data Sheet (170.69KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The SIHF6N40D-E3 is a D series N-channel enhancement-mode Power MOSFET suitable for consumer electronics, telecom power supply and battery charger applications.
  • Low area specific ON-resistance
  • Low input capacitance (CISS)
  • Reduced capacitive switching losses
  • High body diode ruggedness
  • Avalanche energy rated (UIS)
  • Simple gate drive circuitry
  • Low figure-of-merit (FOM) Ron x Qg
  • Fast switching

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
6A
Drain Source Voltage Vds:
400V
On Resistance Rds(on):
0.85ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
3V
Power Dissipation Pd:
30W
Transistor Case Style:
TO-220FP
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
D Series
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
To Be Advised

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Applications

  • Industrial;
  • Power Management;
  • Portable Devices;
  • Consumer Electronics

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.002