Low

SIHB33N60E-GE3 - 

Power MOSFET, N Channel, 33 A, 600 V, 0.083 ohm, 10 V, 2 V

SIHB33N60E-GE3 - Power MOSFET, N Channel, 33 A, 600 V, 0.083 ohm, 10 V, 2 V

Image is for illustrative purposes only. Please refer to product description.

Manufacturer:
VISHAY VISHAY
Manufacturer Part No:
SIHB33N60E-GE3
Order Code:
2364072
Technical Datasheet:
(EN)
See all Technical Docs

Product Overview

The SIHB33N60E-GE3 is a 650V N-channel enhancement-mode Power MOSFET with single configuration. It is suitable for SMPS, server, telecom and PFC power supplies, solar, motor drives, induction heating, renewable energy and welding applications.
  • Low figure-of-merit(FOM) RON x Qg
  • Low input capacitance (CISS)
  • Reduced switching and conduction losses
  • Ultra low gate charge
  • Avalanche energy rated
  • Halogen-free

Applications

Industrial, Power Management, Communications & Networking, Lighting, Portable Devices, Computers & Computer Peripherals, Alternative Energy, Motor Drive & Control

Product Information

:
N Channel
:
33A
:
600V
:
0.083ohm
:
10V
:
2V
:
278W
:
TO-263
:
3Pins
:
150°C
:
-
:
MSL 1 - Unlimited
Find similar products Choose and modify the attributes above to find similar products.

Related Searches

 

1,027 In stock

13 in stock for next day delivery (Liege stock)

1,014 in stock for next day delivery (UK stock)

see cut-off times
 
Check stock and lead times
More stock available week commencing 26/03/18
£5.25 £ 5.25
Price for:
Each (Supplied on Cut Tape)
Multiple: 1 Minimum: 1
Quantity Price
1 + £5.25
10 + £3.86
100 + £3.35
250 + £3.17
500 + £2.84
1000 + £2.39
No longer stocked:: No Longer Manufactured::
Add to Basket
Total Price:
Total Price: ( )
Total Price: --

Customer Reviews

Community

Like to see information about this product from other customers?

 Read discussions, blogs, documents from our community members.

Filters:

Select document type(s) you want to see and click “Apply Filters” button
Post a question to one of our experts or start a discussion and get responses from supplier experts and fellow engineers in our community.