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VISHAY  SIHB33N60E-GE3  Power MOSFET, N Channel, 33 A, 600 V, 0.083 ohm, 10 V, 2 V

VISHAY SIHB33N60E-GE3
Technical Data Sheet (214.58KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The SIHB33N60E-GE3 is a 650V N-channel enhancement-mode Power MOSFET with single configuration. It is suitable for SMPS, server, telecom and PFC power supplies, solar, motor drives, induction heating, renewable energy and welding applications.
  • Low figure-of-merit(FOM) RON x Qg
  • Low input capacitance (CISS)
  • Reduced switching and conduction losses
  • Ultra low gate charge
  • Avalanche energy rated
  • Halogen-free

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
33A
Drain Source Voltage Vds:
600V
On Resistance Rds(on):
0.083ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
2V
Power Dissipation Pd:
278W
Transistor Case Style:
TO-263
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
MSL 1 - Unlimited
SVHC:
To Be Advised

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Applications

  • Industrial;
  • Power Management;
  • Communications & Networking;
  • Lighting;
  • Portable Devices;
  • Computers & Computer Peripherals;
  • Alternative Energy;
  • Motor Drive & Control

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.001