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VISHAY  SI4946BEY-T1-E3  Dual MOSFET, Dual N Channel, 6.5 A, 60 V, 0.033 ohm, 20 V, 2.4 V

VISHAY SI4946BEY-T1-E3
Technical Data Sheet (256.90KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The SI4946BEY-T1-E3 is a 60V Dual N-channel TrenchFET® Power MOSFET. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuit and small-signal packages which have been modified to provide the heat transfer capabilities required by power devices.
  • Halogen-free according to IEC 61249-2-21 definition
  • 175°C Maximum junction temperature
  • 100% Rg Tested

 

Product Information

Transistor Polarity:
Dual N Channel
Continuous Drain Current Id:
6.5A
Drain Source Voltage Vds:
60V
On Resistance Rds(on):
0.033ohm
Rds(on) Test Voltage Vgs:
20V
Threshold Voltage Vgs:
2.4V
Power Dissipation Pd:
2.4W
Transistor Case Style:
SOIC
No. of Pins:
8Pins
Operating Temperature Max:
175°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000255

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