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VISHAY  SI4922BDY-T1-E3  Dual MOSFET, Dual N Channel, 8 A, 30 V, 0.0135 ohm, 12 V, 1.8 V

VISHAY SI4922BDY-T1-E3
Technical Data Sheet (249.05KB) EN Technical Data Sheet (249.05KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The SI4922BDY-T1-E3 is a dual N-channel MOSFET housed in a surface-mount package.
  • TrenchFET® power MOSFET
  • 100% Rg and UIS tested

 

Product Information

Transistor Polarity:
Dual N Channel
Continuous Drain Current Id:
8A
Drain Source Voltage Vds:
30V
On Resistance Rds(on):
0.0135ohm
Rds(on) Test Voltage Vgs:
12V
Threshold Voltage Vgs:
1.8V
Power Dissipation Pd:
2W
Transistor Case Style:
SOIC
No. of Pins:
8Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Industrial;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.000388

Associated Products