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VISHAY  SI4463BDY-T1-E3  MOSFET Transistor, P Channel, 9.8 A, -20 V, 0.0085 ohm, 12 V, -1.4 V

VISHAY SI4463BDY-T1-E3
Technical Data Sheet (229.99KB) EN See all Technical Docs

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Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
9.8A
Drain Source Voltage Vds:
-20V
On Resistance Rds(on):
0.0085ohm
Rds(on) Test Voltage Vgs:
12V
Threshold Voltage Vgs:
-1.4V
Power Dissipation Pd:
1.5W
Transistor Case Style:
SOIC
No. of Pins:
8Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412900
Weight (kg):
.00032

Alternatives

P CHANNEL MOSFET, -20V, 13.7A, SOIC

VISHAY

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