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VISHAY  SI2301CDS-T1-GE3  P CHANNEL MOSFET, -20V, 3.1A TO-236, FULL REEL

VISHAY SI2301CDS-T1-GE3
Technical Data Sheet (193.45KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

 

Product Information

Transistor Polarity:
P Channel
Continuous Drain Current Id:
-3.1A
Drain Source Voltage Vds:
-20V
On Resistance Rds(on):
0.142ohm
Rds(on) Test Voltage Vgs:
2.5V
Threshold Voltage Vgs:
-400mV
Power Dissipation Pd:
860mW
Transistor Case Style:
TO-236
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
To Be Advised

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Country of Origin:
China

Country in which last significant manufacturing process was carried out

RoHS Compliant:
Yes
Tariff No:
85412100
Weight (kg):
.000053

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